Low‐temperature growth of HgTe and HgCdTe using methylallyltelluride
作者： S. K. Ghandhi , I. B. Bhat , H. Ehsani , D. Nucciarone , G. Miller
DOI: 10.1063/1.102124
关键词:
摘要: HgTe and HgCdTe (MCT) layers have been grown by organometallic vapor phase epitaxy at low temperature using methylallyltelluride (MATe), dimethylcadmium (DMCd), elemental mercury. Use of MATe enabled the growth in 250–320 °C range, which is 50 °C lower than when diisopropyltelluride used as tellurium alkyl, for same rate. The were characterized optical microscopy, double crystal x‐ray diffraction, Fourier transform infrared spectroscopy. Growth 320 °C resulted featureless surfaces both layers. high quality demonstrated very narrow full width half maximum diffraction (29 arcsec), comparable to that CdTeZn substrates this study. MCT showed sharp interference fringes even thin layers, indicating presence a interface with substrate.
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