Dual damascene manufacturing process

作者： I-Hsiung Huang , Jiunn-Ren Hwang

DOI:

关键词: Photoresist 、 Electronic engineering 、 Manufacturing process 、 Copper interconnect 、 Layer (electronics) 、 Trench 、 Substrate (electronics) 、 Buffer (optical fiber) 、 Materials science 、 Electrical conductor 、 Optoelectronics

摘要: A method of fabricating a dual damascene opening in dielectric layer above substrate. first photoresist having therein is formed over the layer. The exposes at position where via desired. buffer second area conductive wire and together form metallic interconnect structure. Using as mask, structural that includes trench