Method for forming fine metal patterns by using damascene technique
作者： Sung-Keun Chang , Hee-Yong Yun
DOI:
关键词: Copper interconnect 、 Materials science 、 Electronic engineering 、 Etching 、 Diffusion barrier 、 Metal 、 Layer (electronics) 、 Optoelectronics 、 Semiconductor device
摘要: There is provided a method for forming fine metal patterns of semiconductor devices using damascene technique. In the method, glue layer and diffusion barrier film are formed on lower layer, in turn. An insulating then deposited etched to form contact holes or via holes. A within hole pattern. Therefore, can increase width pattern, thereby enhancing operation speed device. The also easily control processes by separating etching process from those film.
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