Semiconductor structures having an insulative island structure
作者： Se-Woong Park , Kil-Ho Lee , Ki-Joon Kim
DOI:
关键词:
摘要: A semiconductor device and methods of forming a are disclosed. In the methods, layer, such as an insulating interlayer, is formed on substrate. first trench in mask layer trench. The has thickness from bottom surface to top layer. patterned form that at least partially exposes sidewall portion adjacent exposed second smaller than thickness. etched using etching mask. fluid communication with conductive pattern
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