Process for the production of high value ohmic load resistors and mos transistors having a low starting voltage
作者： Hartwig Bierhenke
DOI:
关键词: Transistor 、 Electrical engineering 、 Static induction transistor 、 Optoelectronics 、 Thin-film transistor 、 Heterostructure-emitter bipolar transistor 、 Materials science 、 Floating body effect 、 Drain-induced barrier lowering 、 Threshold voltage 、 Field-effect transistor
摘要: In a process for the production of circuits having at least one field effect transistor including source, drain, and gate electrode, resistor on common substrate in which, starting with body transistor, includes formation an enhancement type by ion implantation channel to decrease voltage adjacent wherein has value which is high comparison forward resistance conductive low reverse transistor.
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