CISFET Processing including simultaneous doping of silicon components and FET channels

作者: Ronald W. Brower

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摘要: A process for forming a CIS (conductor-insulator-semiconductor) integrated circuit having one or more field-effect memory transistors, and polysilicon resistors and/or conductors. The components are formed to predetermined sizes, as needed, so that the implant used establish threshold voltage of transistor also provides desired resistance value(s). may be simultaneously form both non-memory transistors.