FIB and TEM studies of interface structure in diamond–SiC composites
作者： Joon Seok Park , Robert Sinclair , David Rowcliffe , Margaret Stern , Howard Davidson
DOI: 10.1007/S10853-006-0249-7
关键词: Materials science 、 Microstructure 、 Diamond 、 Electron diffraction 、 Etching (microfabrication) 、 Scanning electron microscope 、 Composite material 、 Transmission electron microscopy 、 Composite number 、 Focused ion beam
摘要: The microstructure of diamond–SiC interfaces was studied by transmission electron microscopy (TEM). Specimens were prepared focused ion beam (FIB) etching from a composite bulk material. easily located high contrast in FIB images the surface, and site-specific specimen preparation possible. possible origin this compared to SEM is discussed. TEM diffraction patterns showed that diamond SiC crystals away interface region are relatively defect-free, but numerous defects present at over dimension 600 nm, much larger than physical interface.
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