作者: Geunseop Lee , Sang-Yong Yu , Hanchul Kim , Ja-Yong Koo , Hyung-Ik Lee
DOI: 10.1103/PHYSREVB.67.035327
关键词: Surface (mathematics) 、 Ion 、 Ab initio 、 Scattering 、 Materials science 、 Monolayer 、 Auger electron spectroscopy 、 Diffraction 、 Scanning tunneling microscope 、 Molecular physics
摘要: We report on the absolute measurement of In coverage Si(111)4\ifmmode\times\else\texttimes\fi{}1-In surface using medium-energy ion scattering, and present bias-dependent scanning tunneling microscopy (STM) images. The was determined to be 1 monolayer (ML). This result is in contrast previous results 3/4-ML by semidirect measurements Auger electron spectroscopy STM. Our supports a 4\ifmmode\times\else\texttimes\fi{}1-In structural model consisting four rows, which constructed from recent x-ray diffraction study tested subsequent theoretical calculations. STM images are well reproduced ab initio simulations based this 1-ML-In model.