Absolute In coverage and bias-dependent STM images of the Si(111)4×1-In surface

作者: Geunseop Lee , Sang-Yong Yu , Hanchul Kim , Ja-Yong Koo , Hyung-Ik Lee

DOI: 10.1103/PHYSREVB.67.035327

关键词: Surface (mathematics)IonAb initioScatteringMaterials scienceMonolayerAuger electron spectroscopyDiffractionScanning tunneling microscopeMolecular physics

摘要: We report on the absolute measurement of In coverage Si(111)4\ifmmode\times\else\texttimes\fi{}1-In surface using medium-energy ion scattering, and present bias-dependent scanning tunneling microscopy (STM) images. The was determined to be 1 monolayer (ML). This result is in contrast previous results 3/4-ML by semidirect measurements Auger electron spectroscopy STM. Our supports a 4\ifmmode\times\else\texttimes\fi{}1-In structural model consisting four rows, which constructed from recent x-ray diffraction study tested subsequent theoretical calculations. STM images are well reproduced ab initio simulations based this 1-ML-In model.

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