Effect of annealing temperature of magnesium doped zinc oxide nanorods growth on silicon substrate
作者： Ruziana Mohamed , Zuraida Khusaimi , A.N. Afaah , Aadila Aziz , Mohamad Hafiz Mamat
DOI: 10.4028/WWW.SCIENTIFIC.NET/JNANOR.26.33
关键词: Zinc 、 Annealing (metallurgy) 、 Materials science 、 Analytical chemistry 、 Nanorod 、 Crystallinity 、 Silicon 、 Doping 、 Diffraction 、 Inorganic chemistry 、 Magnesium
摘要: Magnesium (Mg)-doped zinc oxides (ZnO) have been prepared on a silicon substrate by using the solution-immersion method. The nanorods films were annealed at different temperature 0°C, 250°C, 500°C respectively for 1 hour. XRD diffraction indicated that Mg-doped ZnO good crystallinity with hexagonal wurzite structure preferentially oriented along (002) direction. PL spectroscopy room shows strong UV peaks appearing 383 nm when 250°C. intensity of broad emission increases increasing annealing to which is possibility attributed intrinsic defects.
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