Anion Effects on Cu–benzotriazole Film Formation Implications for CMP
作者： Karen L. Stewart , Jian Zhang , Shoutian Li , Phillip W. Carter , Andrew A. Gewirth
DOI: 10.1149/1.2393013
关键词: Mass spectrometry 、 Raman spectroscopy 、 Atomic force microscopy 、 Ellipsometry 、 Ion 、 Chemical-mechanical planarization 、 Analytical chemistry 、 Benzotriazole 、 Inorganic chemistry 、 Chemistry
摘要: We examine the effect of different anions in solutions containing benzotriazole (BTA) on Cu removal rate during chemical mechanical planarization (CMP). In both Cl - and BTA, is nearly a factor twenty lower than either or BTA alone. As-grown films from are characterized using atomic force microscopy, ellipsometry, Raman spectroscopy, mass spectrometry, open-circuit-potential measurements. Films grown halide-containing found to be considerably thicker those other anions. The difference correlates well with as-grown film thicknesses.
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