Mechanism of Copper Removal during CMP in Acidic H 2 O 2 Slurry
作者： T Du , D Tamboli , V Desai , S Seal , None
DOI: 10.1149/1.1648029
关键词:
摘要: Chemical mechanical polishing of copper was performed using as oxidizer and alumina particles abrasives. Electrochemical techniques were used to investigate the dissolution/passivation behavior high-purity Cu disk under static dynamic conditions at pH 4 with varying concentrations. Changes in surface chemistry statically etched investigated X-ray photoelectron spectroscopy. The removal rate reached a maximum 1% concentration decreased further increase concentration. etch showed same trend. morphology indicates that is primarily result electrochemical dissolution low However, increased concentrations, oxidation increases, resulting change mechanism abrasion oxidized surface. © 2004 Society. All rights reserved.
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