A Study of the Dissociation State and the SiO2 Etching Reaction for HF Solutions of Extremely Low Concentration
作者： H. Kikuyama , M. Waki , M. Miyashita , T. Yabune , N. Miki
DOI: 10.1149/1.2054733
关键词: Electrical resistivity and conductivity 、 Concentration effect 、 Electrochemistry 、 Inorganic chemistry 、 Dissociation (chemistry) 、 Ion 、 Activation energy 、 Conductivity 、 Ternary compound 、 Chemistry
摘要: … 1147 We report here a means of computing the etching rates of HF and KHF~ solutions … SiO2 etching rate and HF~ ion concentration, a dominant ion in the etching process. 11-17.37 …
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