Influence of Solution Volume on the Dissolution Rate of Silicon Dioxide in Hydrofluoric Acid
作者： Boris Shvartsev , Danny Gelman , Ilia Komissarov , Alon Epshtein , David Starosvetsky
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摘要: Experimental data and modeling of the dissolution various Si/SiO2 thermal coatings in different volumes hydrofluoric acid (HF) are reported. The rates SiO2 -film dissolution, measured by means electrochemical techniques, alteration HF activity depend on thickness film coating. Despite small (0.6-1.2 mL) solution, an effect -coating rate was detected. To explain alterations detected after spectroscopic analyses (NMR FTIR) chemical composition solutions were conducted. This is associated with a modification which results either formation oxidized species solution or precipitation products. HF2 (-) accumulation owing to identified as source alteration.
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