High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof
作者： Michael P. Chudzik , Huiming Bu , William K. Henson , Naim Moumen , Wesley C. Natzle
DOI:
关键词: Titanium nitride 、 Electronic engineering 、 Metal gate 、 Gate oxide 、 Substrate (electronics) 、 Dielectric 、 Materials science 、 Silicon 、 Optoelectronics 、 High-κ dielectric 、 Gate dielectric
摘要: Methods for fabricating gate electrode/high-k dielectric structures having an improved resistance to the growth of silicon dioxide (oxide) at dielectric/silicon-based substrate interface. In embodiment, a method forming transistor structure comprises: incorporating nitrogen into silicon-based proximate surface substrate; depositing high-k across and electrode form structure. one comprises titanium nitride rich in inhibiting diffusion oxygen.
lens.org 参考文章(12)
Michikazu Matsumoto, Naohisa Sengoku, Electrode structure and method for fabricating the same ,(2001)
Joong Jeon, Preparation of stack high-K gate dielectrics with nitrided layer ,(2001)
Narishi Gonohe, Harunori Ushikawa, Tomoyasu Kondo, Satoru Toyoda, Kyuzo Nakamura, Method for Forming Tantalum Nitride Film ,(2006)
JJ Yu, II Liaw, IW Boyd, None, Direct nitridation of high-k metal oxide thin films using argon excimer sources Electronics Letters. ,vol. 41, pp. 1210- 1211 ,(2005) , 10.1049/EL:20052859
Seong-Geon Park, Sang-Bom Kang, Jong-Myeong Lee, Gil-heyun Choi, Kyung-In Choi, You-Kyoung Lee, Sang-Woo Lee, Methods of producing integrated circuit devices utilizing tantalum amine derivatives ,(2004)
Mark R. Visokay, Antonio L. P. Rotondaro, Luigi Colombo, Gate dielectric and method ,(2002)
Chih-Wei Yang, Yean-Kuan Fang, Shih-Fang Chen, Chun-Yu Lin, Ming-Fang Wang, Yeou-Ming Lin, Tuo-Hung Hou, Liang-Gi Yao, Shih-Chang Chen, Mong-Song Liang, Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation Electronics Letters. ,vol. 39, pp. 421- 422 ,(2003) , 10.1049/EL:20030278
Olubunmi O. Adetutu, Tien Ying Luo, Sangwoo Lim, Paul A. Grudowski, Hsing H. Tseng, Method of making a nitrided gate dielectric ,(2006)
Chien-Hao Chen, Cheng-Lung Hung, Donald Y. Chao, Yong-Tian Hou, Integrated circuit metal gate structure and method of fabrication ,(2008)
Shinobu Takehiro, Method for manufacturing a MOS transistor having multi-layered gate oxide ,(2000)