Gate dielectric and method
作者： Mark R. Visokay , Antonio L. P. Rotondaro , Luigi Colombo
DOI:
关键词:
摘要: CMOS gate dielectric made of high-k metal silicates by passivating a silicon surface with nitrogen compounds prior to deposition. Optionally, dioxide monolayer may be preserved at the interface.
google.com.tr参考文章(49)
Shi-Chung Sun, Incorporating TCS-SiN barrier layer in dual gate CMOS devices ,(2002)
Frank Keeble, Ion etching and chemical vapour deposition ,(1987)
Tao-Cheng Lu, Samuel Pan, Ta-Hui Wang, Tso-Hung Fan, Non-volatile semiconductor memory device with multi-layer gate insulating structure ,(2001)
Yoshi Ono, Yanjun Ma, Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same ,(2000)
Bikas Maiti, Jesus Cuellar, Philip J. Tobin, Rama I. Hegde, Method for forming high dielectric constant metal oxides ,(1997)
Jeffrey Babcock, Angelo Pinto, Gregory E. Howard, Method for constructing a metal oxide semiconductor field effect transistor ,(2003)
Brian Doyle, Jack Lee, Method for forming a High dielectric constant insulator in the fabrication of an integrated circuit ,(1996)
Leonard Forbes, Kie Y. Ahn, Weak ferroelectric transistor ,(2002)
Ronghao Li, Dinah W. Y. Sah, Human spinal cord cell lines and methods of use therefor ,(1999)
Frederick B. Jenne, Krishnaswamy Ramkumar, SONOS structure including a deuterated oxide-silicon interface and method for making the same ,(2002)