Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress
作者： Veeraraghavan S. Basker , Johnathan E. Faltermeier , Takashi Ando , Tenko Yamashita , Hemanth Jagannathan
DOI:
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摘要: A method of reducing a migration oxygen into high-k dielectric layer semiconducting device is disclosed. An oxide the deposited on substrate. chemical composition top portion altered. The to form device. altered reduces layer.
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