Process chamber apparatus, systems, and methods for controlling a gas flow pattern

作者: Chandrakant M. Sapkale , Izya Kremerman , Jeffrey C. Hudgens , Nir Merry

DOI:

关键词: Flow control (fluid)Volumetric flow rateElectrical engineeringFlow patternMaterials scienceMechanical engineering

摘要: Process chamber gas flow control apparatus may include, or be included in, a process configured to substrate therein. The include valve seal an exhaust port in the chamber. moveable X, Y, and Z directions relative adjust pattern (including, e.g., rate and/or uniformity) within Methods of adjusting are also provided, as other aspects.

参考文章(28)
Jae-Chull Lee, William N. Sterling, Sam Hyungsam Kim, Paul Brown, Valve door with ball coupling ,(2007)
James P. Cruse, Jared Ahmad Lee, Ezra Robert Gold, Andrew Nguyen, Aniruddha Pal, Ankur Agarwal, Martin Jeff Salinas, Apparatus for radial delivery of gas to a chamber and methods of use thereof ,(2010)
Thomas R. Omstead, Panya Wongsenakhum, Edward J. Nagy, William Starks, William J. Messner, Mehrdad M. Moslehi, Method and system for dispensing process gas for fabricating a device on a substrate ,(1998)
Jivko Dinev, Alexander Matyushkin, Denis Koosau, Uwe Leucke, Jan Rupf, Ron Tilger, Farid Abooameri, Manfred Oswald, Francesco Maletta, Markus Meye, Thorsten Lehmann, Declan Scanlan, Xiaoping Zhou, Etch reactor suitable for etching high aspect ratio features ,(2009)
Daniel J. Devine, Bruce W. Peuse, Rudy Santo Tomas Cardema, Yao Zhi Hu, Shuen Chun Choy, Carl J. Galewski, Hung Thanh Phan, Process and system for varying the exposure to a chemical ambient in a process chamber ,(2009)