Method and system for dispensing process gas for fabricating a device on a substrate
作者： Thomas R. Omstead , Panya Wongsenakhum , Edward J. Nagy , William Starks , William J. Messner
DOI:
关键词: Engineering drawing 、 Deposition (phase transition) 、 Completion (oil and gas wells) 、 Conductance 、 Substrate (printing) 、 Materials science 、 Flow (psychology) 、 Process (computing) 、 Optoelectronics 、 Purge 、 Chemical vapor deposition
摘要: A method and system for fabricating a device on substrate with process gas, such as chemical vapor deposition. reaction chamber support chuck cooperate to form low conductance configuration axisymetric gas flow over the high enhanced evacuation of residual from upon completion process. dual has an indented region that aligns exhaust port restrict in configuration, moves distal showerhead provide reduced restriction evacuation. The includes thermal control enhancing film deposition reducing chuck. An opening housing provides independent housing. present invention enhance throughput formation by purge cycle times.
google.ca 参考文章(9)
Kazuyuki Fujihara, Gil-Gwang Lee, Kyu-hwan Chang, Showerhead for a gas supplying apparatus ,(1994)
Mehrdad M. Moslehi, Cecil J. Davis, Robert T. Matthews, A programmable multizone gas injector for single-wafer semiconductor processing equipment ,(1992)
Michael Vukelic, Fluid dispersion head for CVD appratus ,(1992)
Alan D. Rose, Robert M. Kennedy, Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor ,(1987)
Seishi Murakami, Yuichiro Fujikawa, Tatsuo Hatano, Shower head and film forming apparatus using the same ,(1996)
Avi Tepman, Gerald Zheyao Yin, Donald Olgado, Compartnetalized substrate processing chamber ,(1994)
Mehrdad M. Moslehi, Cecil J. Davis, Distributed-array magnetron-plasma processing module and method ,(1990)
Steve S. Y. Mak, Gerald Zheyao Yin, Diana Xiaobing Ma, Yan Ye, Process gas focusing apparatus and method ,(1996)