作者: Rong-ping Wang , Guang-wen Zhou , Yu-long Liu , Shao-hua Pan , Hong-zhou Zhang
DOI: 10.1103/PHYSREVB.61.16827
关键词: Silicon nanowires 、 Phonon 、 High order 、 Optoelectronics 、 Excimer laser ablation 、 Materials science 、 Overtone 、 Spectral line 、 Raman spectroscopy 、 Scattering
摘要: Raman-scattering spectra of silicon nanowires (SiNW's) with different diameters were obtained at room temperature, The Raman peaks SiNW's found to shift and broaden decreasing diameter the SiNW's, In addition fundamental phonon modes, overtone combination modes also observed identified according selection rules bands. A confinement model was used explain experimental results modes. show that effect becomes more obvious when SiNW is less than 22 nm. present should be benefit applications SiNW's.