Temperature behavior of electron-acceptor transitions and oxygen vacancy recombinations in ZnO thin films
作者： Xiangdong Meng , Zhiming Shi , Xiaobing Chen , Xianghua Zeng , Zhuxi Fu
DOI: 10.1063/1.3284101
关键词: Photoluminescence 、 Electron acceptor 、 Materials science 、 Exciton 、 Acceptor 、 Free electron model 、 Photochemistry 、 Emission spectrum 、 Ultraviolet 、 Semiconductor
摘要: The present study focuses on the photoluminescence (PL) properties of ZnO films prepared by reaction water and zinc. Temperature-dependent PL characteristics have been investigated in range from 15 to 260 K. spectrum at K is dominated neutral donor-bound exciton (D0X) emissions. emission line about 3.304 eV can be due transition free electrons acceptor states (eA0). It suggested that ultraviolet room temperature attributed incorporation eA0 (FX) transitions, rather than sole FX. According behavior green band, it further confirmed mainly related singly ionized oxygen vacancies.
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