Electrical transport in metal–carbon hybrid multijunction devices

作者: Neeraj Dwivedi , Sushil Kumar , J. David Carey , Hitendra K. Malik

DOI: 10.1016/J.DIAMOND.2014.07.004

关键词: SemiconductorNanocrystalline materialMetalAmorphous solidElectrical resistance and conductanceChemical engineeringMaterials scienceAmorphous carbonSecondary ion mass spectrometryNanotechnologyCarbon

摘要: Abstract Understanding the factors that influence structural, mechanical and electrical properties of hybrid metal–carbon multilayer materials devices are explored in this study by examining effects choice metal, Cu or Ti, number bilayers. With up to four bilayers, corresponding ten discrete junctions, lower interfacial stresses resistance always found structures, when compared with Ti containing multilayers. The is a result copper–carbon interaction which facilitates carbon sp 3 2 bonding transformation accompanied metal-induced layer from an amorphous nanostructured morphology also aids conduction. Time-of-flight secondary ion mass spectrometry measurements demonstrate two selected metals, represent extreme examples their affinity bond (Ti) representing weak (strong) metal for bonding. This shows importance understanding characteristics particular, wider role played relative chemical reactivity components multijunction semiconductor-based general.

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