Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition

摘要: Polycrystalline silicon carbide was deposited from methyltrichlorosilane in cold-walled and hot-walled reactors, on (100) SiC surface layers that were formed Si wafers. The initial stages of the process studied by electron microscopy after relatively short deposition times. Submicron features nucleated with a specific crystallographic orientation respect to substrate, where h111j planes th—SiC substrate coincided h0001j a–SiC features. These occurred only at twins b–SiC substrate. This demonstrates nucleation under these conditions is controlled defects Surface contamination reactor configuration also had substantial effects nucleation.