Numerical investigation of the effect of a crucible cover on crystal growth in the industrial directional solidification process for silicon ingots
作者： Zaoyang Li , Yunfeng Zhang , Zhiyan Hu , Genshu Zhou , Lijun Liu
DOI: 10.1016/J.JCRYSGRO.2013.11.055
关键词: Micro-pulling-down 、 Annealing (metallurgy) 、 Crystal growth 、 Melt flow index 、 Heat transfer 、 Metallurgy 、 Directional solidification 、 Silicon 、 Materials science 、 Monocrystalline silicon
摘要: Abstract We carried out transient global simulations of heating, melting, growing, annealing and cooling stages for the industrial directional solidification (DS) process. Two separate DS processes were performed with a covered crucible an uncovered to investigate effect cover on heat transfer silicon crystal growth. It is found that blocks from heaters domain significantly, therefore influences growth through entire For melting feedstock, covering can lead significant increase in time, whereas it has little sequence. During growing stage, time process much shorter than without cover. The also influence melt convection near free surface center, but hardly changes flow pattern deep crucible. processes, not significantly affected by isotherm shapes ingots are similar
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