Numerical simulation of impurity transport under the effect of a gas flow guidance device during the growth of multicrystalline silicon ingots by the directional solidification process
作者： Ying-Yang Teng , Jyh-Chen Chen , Bo-Siang Huang , Ching-Hsin Chang
DOI: 10.1016/J.JCRYSGRO.2013.01.040
关键词: Limiting oxygen concentration 、 Oxygen 、 Directional solidification 、 Free surface 、 Carbon 、 Silicon 、 Metallurgy 、 Impurity 、 Materials science 、 Ingot
摘要: Abstract A numerical simulation has been performed to determine the concentration of oxygen and carbon in a Si melt during mc-Si ingot growth process under influence gas guidance device. With application this device, velocity above free surface may increase, followed by decrease SiO CO concentrations flux at surface. As consequence decrease. The effectiveness flow device mainly depends on gap between it lower be obtained with smaller gap. On other hand, also decreases as until reaches certain small value, after which increases.
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