作者: Jin-Hyung Lee , Jeong Hoon Lee , Sang Kyung Kim , Hyung-Ho Park , Tae Song Kim
DOI: 10.1007/S10853-015-8955-7
关键词: Composite material 、 Fabrication 、 Materials science 、 Wafer 、 Zirconate 、 Titanate 、 Piezoelectricity 、 Lead zirconate titanate 、 Microstructure 、 Sintering
摘要: We propose a hybrid fabrication technique for piezoelectric thick films using sol-infiltration and direct-patterning process. To achieve the demands of high-density at low sintering temperature, photosensitive lead zirconate titanate (PZT) solution was infiltrated into zinc niobate–lead (PZN–PZT) film. The direct-patterned PZT were formed on locally screen-printed film, photomask UV light. By optimizing thickness layer, that prepared with 120-s soaking time sol showed very dense uniform microstructure large grain size temperature 800 °C. It also had enhanced electrical properties. measured remnant polarization (Pr) coercive field (Ec) 14.61 μC cm−2 24.16 kV cm−1, respectively. Pr value over four times greater than those films. fabricated array-type resonators PZN–PZT to show ability film silicon wafer actuator sensor application, especially mass production.