作者: Georgios K. Konstadinidis
DOI:
关键词: Transistor 、 Biasing 、 Semiconductor device 、 Negative-bias temperature instability 、 Compensation (engineering) 、 Lookup table 、 Electronic engineering 、 Engineering 、 Electrical engineering 、 Microprocessor 、 Threshold voltage
摘要: A method for compensating negative bias temperature instability (NBTI) effects on a given model of transistors includes monitoring the NBTI over time, determining change in threshold voltage time based monitoring, forward voltage, and applying to time. The may further include storing results lookup table, adjusting table. emulating system comprising plurality semiconductor devices which are used.