Ionisation and trapping of hydrogen at SiO2 interfaces
作者： V.V. Afanas’ev , A. Stesmans
DOI: 10.1016/S0921-5107(98)00275-X
关键词: Atomic physics 、 Analytical chemistry 、 Atmospheric temperature range 、 Hydrogen bond 、 Silicon 、 Materials science 、 Thermal ionization 、 Hydrogen 、 Dangling bond 、 Valence (chemistry) 、 Annealing (metallurgy)
摘要: Abstract Annealing of interfaces between SiO 2 and (111)Si, (100)Si in H the temperature range 450–800°C is found to introduce a considerable density (up 10 13 cm −2 ) positively charged centres. There no comparable dangling bonds initially present nor generated during annealing at Si/SiO or layer that could account for observed hydrogen bonding. Therefore, suggested be trapped valence alternation state 3-fold coordinated oxygen resembling well known hydronium ion (H 3 O) + .
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