Influence of nanocrystalline structure of surface on boron gettering from silicon

摘要: Abstract The boron gettering from nanocrystallites of porous silicon with rate significantly greater in comparison planar structure has been for the first time observed. As a probe process, EPR signal intensity Pb center was used. It established that strain effect during surface oxidation stimulates strongly process bulk to SiO2/Si interface layer. Phenomenon strong absorption microwave radiation by layer after sample annealed air at 400–500 °C also detected 37 GHz. This is equivalent high conductivity (ρ = 10− 2–10− 3 Ω cm) and it much higher (at least 104 times) than c-Si substrate. Removal (thickness ∼ 20 μm) 400-μm substrate leads where Q-factor cavity restored completely. comes mainly conduction along nanocrystalline grains, while SiO2 essentially insulates their interface. One possible explanation concentration positive charge states formed can lead creation density free electrons formation conductive channels each nanocrystallite. On other hand, appreciable not on 9.4 GHz (X-band); therefore, we cannot exclude existence quasi-resonant related sizes, i.e. quantum confinement tunneling between grains.