Hydrogen enhancement of thermally induced interface degradation in thermal(111) Si/SiO2 traced by electron spin resonance
作者： A. Stesmans , V.V. Afanas’ev
DOI: 10.1016/S0921-5107(98)00281-5
关键词:
摘要: Abstract The process of interface degradation induced in (111)Si/SiO2 by postoxidation annealing (POA) vacuum, previously identified electron spin resonance (ESR) as creation persistent Pb (Si/Si3) defects, is found to be strongly enhanced (≈6 times) when performed H2 ambient, and additionally, sensed ESR, the treshold temperature for lowered from ≈640°C vacuum ≈550°C. It thus appears that POA rich such routinely applied passivate states (preexisting Pbs) naturally introduced during oxidation, effectively creates extra defect entities, which then have passivated additionally. results point key role ambient degradation. data reveal atomic nature one mechanisms electrically long known H-induced generation detrimental states. PACS numbers: 85.30.De; 68.35.Dv; 73.40.Ty; 76.30.Mi
elsevier.com
sci-hub.se 参考文章(19)
N. M. Johnson, D. K. Biegelsen, M. D. Moyer, Low‐temperature annealing and hydrogenation of defects at the Si–SiO2 interface Journal of Vacuum Science and Technology. ,vol. 19, pp. 390- 394 ,(1981) , 10.1116/1.571070
A. Stesmans, Passivation of Pb0 and Pb1 interface defects in thermal (100) Si/SiO2 with molecular hydrogen Applied Physics Letters. ,vol. 68, pp. 2076- 2078 ,(1996) , 10.1063/1.116308
A. Stesmans, G. Van Gorp, Observation of dipolar interactions betweenPb0defects at the (111) Si/SiO2interface Physical Review B. ,vol. 42, pp. 3765- 3768 ,(1990) , 10.1103/PHYSREVB.42.3765
Chih‐Tang Sah, Jack Yuan‐Chen Sun, Joseph Jeng‐Tao Tzou, Study of the atomic models of three donorlike defects in silicon metal‐oxide‐semiconductor structures from their gate material and process dependencies Journal of Applied Physics. ,vol. 55, pp. 1525- 1545 ,(1984) , 10.1063/1.333411
A. Stesmans, Revision of H2 passivation of Pb interface defects in standard (111)Si/SiO2 Applied Physics Letters. ,vol. 68, pp. 2723- 2725 ,(1996) , 10.1063/1.115577
T. W. Hickmott, Annealing of surface states in polycrystalline‐silicon–gate capacitors Journal of Applied Physics. ,vol. 48, pp. 723- 733 ,(1977) , 10.1063/1.323662
A. Stesmans, Structural relaxation of P b defects at the (111)Si/ SiO 2 interface as a function of oxidation temperature: The P b -generation–stress relationship Physical Review B. ,vol. 48, pp. 2418- 2435 ,(1993) , 10.1103/PHYSREVB.48.2418
E. H. Poindexter, G. J. Gerardi, M.‐E. Rueckel, P. J. Caplan, N. M. Johnson, D. K. Biegelsen, Electronic traps and Pb centers at the Si/SiO2 interface: Band‐gap energy distribution Journal of Applied Physics. ,vol. 56, pp. 2844- 2849 ,(1984) , 10.1063/1.333819
K. Hofmann, G. W. Rubloff, D. R. Young, Role of oxygen in defect‐related breakdown in thin SiO2 films on Si (100) Journal of Applied Physics. ,vol. 61, pp. 4584- 4588 ,(1987) , 10.1063/1.338365
K. L. Brower, Dissociation kinetics of hydrogen-passivated (111) Si-SiO2 interface defects. Physical Review B. ,vol. 42, pp. 3444- 3453 ,(1990) , 10.1103/PHYSREVB.42.3444