Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition.
作者： Chia-Hsun Hsu , Xin-Peng Geng , Wan-Yu Wu , Ming-Jie Zhao , Xiao-Ying Zhang
DOI: 10.3390/MOLECULES25215043
关键词: Thin film 、 Band gap 、 Annealing (metallurgy) 、 Doping 、 X-ray photoelectron spectroscopy 、 Atomic layer deposition 、 Analytical chemistry 、 Grain size 、 Oxygen 、 Materials science
摘要: In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that thermal can significantly reduce amount oxygen vacancies defects as evidenced X-ray photoelectron spectroscopy spectra due to in-diffusion from films. As shown diffraction, repairs crystalline structure releases stress. absorption coefficient increases with temperature increased density. reaching 600 °C leads relatively significant changes in grain size band gap. From gap Hall-effect measurements, lower than reduces acting shallow donors, while it is suspected higher further remove introduced mid-gap states.
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