Structural and electrical characterization of xBiScO3–(1−x)BaTiO3 thin films
作者： Daniel S. Tinberg , Susan Trolier-McKinstry
DOI: 10.1063/1.2430627
关键词: Thin film 、 Crystallite 、 Polarizability 、 Materials science 、 Permittivity 、 Pulsed laser deposition 、 Analytical chemistry 、 Dielectric loss 、 Phase boundary 、 Relative permittivity
摘要: Using a tolerance factor approach, it was predicted that xBiScO3–(1−x)BaTiO3 will have morphotropic phase boundary should enhance both the polarizability and permittivity, relative to BiScO3 end member, near composition of x=0.4. To verify this prediction, pulsed laser deposition used grow thin films on (100) SrRuO3∕LaAlO3 Pt-coated Si substrates. Typical growth conditions were 700°C 100mTorr O2∕O3. The perovskite structure found be stable for compositions x=0.2–0.6 in epitaxial films, with reduced stability polycrystalline films. temperature where maximum permittivity occurs rises as is added BaTiO3, increasingly relaxorlike behavior observed increasing content. Room values ranged from 200 400, loss tangents ∼0.1 at 10kHz. experimental 0.4BiScO3–0.6BaTiO3 showed broad 800 150–275°C. Films w...
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