Reactive ion etching of copper with BCl3 and SiCl4: Plasma diagnostics and patterning

摘要: The reactive etching of copper in BCl3 and SiCl4 based plasmas has been investigated empirically modeled using statistically designed experimentation. Gas mixtures with N2 exhibit considerably higher etch rates than Ar. In the temperature range 225 to 275 °C, rate BC13/N2 can be as much an order magnitude larger BCl3/Ar. Plasma diagnostics [optical emission spectroscopy (OES) Langmuir probe measurements] were used study effect diluent gas on discharge characteristics resulting process. OES indicates that does not act merely a but rather increases concentration Cl atoms. data show very little difference ion densities between various mixtures. These results suggest, combination empirical model, is limited by amount available reactant product desorption investigated. High‐resolution patterning ...