Enhanced formation of Ge nanocrystals in Ge : SiO 2 layers by swift heavy ions
作者： I V Antonova , V A Skuratov , V A Volodin , S A Smagulova , D M Marin
DOI: 10.1088/0022-3727/45/28/285302
关键词: Analytical chemistry 、 Amorphous solid 、 Photoluminescence 、 Raman spectroscopy 、 Annealing (metallurgy) 、 Irradiation 、 Ion 、 Nanocrystal 、 Materials science 、 Mineralogy 、 Fluence
摘要: In this paper we report the ability of swift heavy Xe ions with an energy 480MeV and a fluence 10 12 cm −2 to enhance formation Ge nanocrystals within SiO2 layers variable contents. These Ge-SiO2 films were fabricated by co-sputtering quartz sources which followed various annealing procedures. particular, found that irradiation Ge:SiO2 subsequent at 500 ◦ C leads high concentration (NCs) size 2‐5nm, whereas without only amorphous inclusions observed. This effect, as evidenced Raman spectra, is enhanced pre-irradiation 550 post-irradiation 600 C, also observation room temperature visible photoluminescence. (Some figures may appear in colour online journal)
harvard.edu
ntmdt.com参考文章(22)
L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, F. Priolo, Optical gain in silicon nanocrystals Nature. ,vol. 408, pp. 440- 444 ,(2000) , 10.1038/35044012
XL Wu, T Gao, XM Bao, F Yan, SS Jiang, D Feng, None, Annealing temperature dependence of Raman scattering in Ge+-implanted SiO2 films Journal of Applied Physics. ,vol. 82, pp. 2704- 2706 ,(1997) , 10.1063/1.366089
S. Furuno, H. Otsu, K. Hojou, K. Izui, Tracks of high energy heavy ions in solids Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 107, pp. 223- 226 ,(1996) , 10.1016/0168-583X(95)00813-6
I V Antonova, A G Cherkov, V A Skuratov, M S Kagan, J Jedrzejewski, I Balberg, Low-dimensional effects in a three-dimensional system of Si quantum dots modified by high-energy ion irradiation. Nanotechnology. ,vol. 20, pp. 185401- ,(2009) , 10.1088/0957-4484/20/18/185401
I. V. Antonova, S. A. Smagulova, E. P. Neustroev, V. A. Skuratov, J. Jedrzejewski, E. Savir, I. Balberg, Charge spectroscopy of SiO2 layers with embedded silicon nanocrystals modified by irradiation with high-energy ions Semiconductors. ,vol. 45, pp. 582- 586 ,(2011) , 10.1134/S1063782611050034
D.E. Aspnes, Optical properties of thin films Thin Solid Films. ,vol. 89, pp. 249- 262 ,(1982) , 10.1016/0040-6090(82)90590-9
B. Schmidt, A. Mücklich, L. Röntzsch, K.-H. Heinig, How do high energy heavy ions shape Ge nanoparticles embedded in SiO2 Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 257, pp. 30- 32 ,(2007) , 10.1016/J.NIMB.2006.12.152
M V Kharlamova, Electronic properties of pristine and modified single-walled carbon nanotubes Physics-Uspekhi. ,vol. 56, pp. 1047- 1073 ,(2013) , 10.3367/UFNE.0183.201311A.1145
Seung Hui Hong, Min Choul Kim, Pil Seong Jeong, Suk-Ho Choi, Kyung Joong Kim, Ge-nanodot multilayer nonvolatile memories Nanotechnology. ,vol. 19, pp. 305203- ,(2008) , 10.1088/0957-4484/19/30/305203
E. B. Gorokhov, Effect of Quantum Confinement on Optical Properties of Ge Nanocrystals in GeO[sub 2] Films Semiconductors. ,vol. 39, pp. 1168- 1175 ,(2005) , 10.1134/1.2085265