Intralayer interaction effects on surface resistivity: sulfur and oxygen on Cu(100)

作者: R.G. Tobin

DOI: 10.1016/S0039-6028(02)02531-1

关键词: ElectronChemical physicsAtomSubstrate (electronics)Fermi levelInorganic chemistryScatteringElectronic structureChemisorptionChemistryElectrical resistivity and conductivity

摘要: Abstract Sulfur and oxygen adsorbed on Cu(1 0 0) have nearly identical bonding geometries electronic structures. But they show strikingly different trends in their scattering of conduction electrons, as reflected the variation substrate’s surface resistivity with adsorbate coverage. For varies linearly coverage, expected for noninteracting adsorbates. sulfur, however, coverage dependence is highly nonlinear, increasing strongly at low then becoming constant above about 0.15 ML. Measurements sputtered surfaces that defects adlayer ordering are not responsible nonlinearity. Instead, it must be attributed to interactions between atoms modify structure near Fermi level so diminish each atom’s cross-section.

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