Structure and photoinduced changes in bulk and films of As-Ge-S system

摘要: Abstract Structure and basic physico-chemical properties of the bulk samples vacuum evaporated thin films AsxGe40−xS60 (x=0, 10, 20, 30, 40) were studied in this work. The Raman spectra showed that structure as well consists AsS3/2 and/or GeS4/2 units, other units containing homopolar bonds (As–As Ge–Ge S–S). concentration as-prepared layers is higher than same composition. Exposure to halogen light decreases these approaches samples. Considerable changes optical such transmission, refractive index chemical resistance accompany light-induced homogenization. These glasses have a broad window high IR transmissivity (≈70%) up λ=10–11 μm. In spectrum binary Ge40S60, intensive absorption bands appear, which indicate partial hydrolysis sample. contrast samples, are photosensitive. lamp causes both photodarkening photobleaching depending on Ge content, with corresponding decrease increase visible near regions. addition into As–S system can eliminate or alter character photoinduced parameters.