Photoinduced effect in Ga–Ge–S based thin films
作者： S.H. Messaddeq , M. Siu Li , S. Inoue , S.J.L. Ribeiro , Y. Messaddeq
DOI: 10.1016/J.APSUSC.2005.12.074
关键词:
摘要: Abstract Glassy films of Ga10Ge25S65 with 4 μm thickness were deposited on quartz substrates by electron beam evaporation. Photoexpansion (PE) (photoinduced increase in volume) and photobleaching (PB) (blue shift the bandgap) effects have been examined. The exposed areas analyzed using perfilometer an expansion 1.7 μm (ΔV/V ≈ 30%) is observed for composition during 180 min 3 mW/cm2 power density. optical absorption edge measured film Ge25Ga10S65 above below bandgap show that blue gap photon illumination considerable higher (ΔEg = 440 meV) than ΔEg induced (ΔEg = 190 meV). distribution refraction index profile showed a negative change irradiated samples (Δn = −0.6). morphology was examined scanning microscopy (SEM). chemical compositions energy dispersive analyzer (EDX) indicate oxygen atoms into area. Using Lloyd's mirror setup continuous wave holography it possible to record holographic gratings photoinduced occur them. Diffraction efficiency up 25% achieved recorded atomic force images are presented.
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