Thermally stimulated luminescence from x-irradiated porous silicon
作者： D. W. Cooke , B. L. Bennett , E. H. Farnum , W. L. Hults , R. E. Muenchausen
DOI: 10.1063/1.119243
关键词: Analytical chemistry 、 Thermoluminescence 、 Materials science 、 Photoluminescence 、 Emission spectrum 、 Optics 、 Surface layer 、 Irradiation 、 Silicon 、 Luminescence 、 Porous silicon
摘要: We have measured thermally stimulated luminescence from light-emitting porous silicon that has been x irradiated at room temperature and heated to 400 °C. The glow curve exhibits peaks 103, 155, 219, 271 °C, with additional maxima occurring above Each of the emits similar emission spectra characterized by a band maximum near 720 nm 0.39 eV full width half-maximum. Following irradiation temperature, sample well-known photoluminescence, but after heating 400 °C, loss hydrogen renders nonphotoluminescent. However, can be repeatedly induced. Observation is unambiguous evidence for existence an insulating surface layer on silicon.
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