Etching of Mesa Structures in HgCdTe
作者： V. Srivastav , R. Pal , B. L. Sharma , A. Naik , D. S. Rawal
DOI: 10.1007/S11664-005-0203-5
关键词: Inorganic compound 、 Surface roughness 、 Etching (microfabrication) 、 Analytical chemistry 、 Engraving 、 Chemistry 、 Chemical kinetics 、 Anisotropy 、 Mineralogy 、 Ethylene glycol 、 Surface finish
摘要: Mesa structures were etched in HgCdTe using different Br2/HBr/Ethylene glycol (EG) formulations. Etch rate and degree of anisotropy (A) studied detail for all the combinations. Addition EG to conventional etchant gave A>0.5, with controllable etch rates. Optimum composition was determined be 2% Br2 a 3:1 mixture EG:HBr. This resulted good factor ∼0.6 reasonably optimum ∼2.5 µm/min, rms surface roughness ∼2 nm. Kinetics etching reaction have also been concentration an mechanism has proposed.
springer.com
harvard.edu
sci-hub.se 参考文章(14)
John Lester Miller, Principles of infrared technology ,(1994)
Wayne M. Moreau, Semiconductor Lithography: Principles, Practices, and Materials ,(1987)
J. F. Siliquini, J. M. Dell, C. A. Musca, E. P. G. Smith, L. Faraone, J. Piotrowski, Estimation of doping density in HgCdTe p-n junctions using scanning laser microscopy Applied Physics Letters. ,vol. 72, pp. 52- 54 ,(1998) , 10.1063/1.120642
E. P. G. Smith, J. K. Gleason, L. T. Pham, E. A. Patten, M. S. Welkowsky, Inductively coupled plasma etching of HgCdTe Journal of Electronic Materials. ,vol. 32, pp. 816- 820 ,(2003) , 10.1007/S11664-003-0076-4
V. J. Novotny, T. E. Karis, Surface potential of thin perfluoropolyether films on carbon Applied Physics Letters. ,vol. 71, pp. 52- 54 ,(1997) , 10.1063/1.119466
S. Holander-Gleixner, H. G. Robinson, C. R. Helms, Derivation of an analytical model to calculate junction depth in HgCdTe photodiodes Journal of Applied Physics. ,vol. 83, pp. 1299- 1304 ,(1998) , 10.1063/1.366829
W. H. Chang, T. Lee, W. M. Lau, An x‐ray photoelectron spectroscopic study of chemical etching and chemo‐mechanical polishing of HgCdTe Journal of Applied Physics. ,vol. 68, pp. 4816- 4819 ,(1990) , 10.1063/1.346139
I M Kotina, L M Tukhkonen, G V Patsekina, A V Shchukarev, G M Gusinskii, Study of CdTe etching process in alcoholic solutions of bromine Semiconductor Science and Technology. ,vol. 13, pp. 890- 894 ,(1998) , 10.1088/0268-1242/13/8/011
David R. Rhiger, Use of ellipsometry to characterize the surface of HgCdTe Journal of Electronic Materials. ,vol. 22, pp. 887- 898 ,(1993) , 10.1007/BF02817502
J. D. Benson, A. J. Stoltz, A. W. Kaleczyc, M. Martinka, L. A. Almeida, P. R. Boyd, J. H. Dinan, Effect of photoresist-feature geometry on electron-cyclotron resonance plasma-etch reticulation of HgCdTe diodes Journal of Electronic Materials. ,vol. 31, pp. 822- 826 ,(2002) , 10.1007/S11664-002-0244-Y