Dynamics and spectral characteristics of quantum dot semiconductor lasers under optical injection locking
作者： Hamid Mirdadashi , Mohammad Mohsen Sheikhey , Hamed Baghban
关键词: Laser linewidth 、 Injection locking 、 Modulation 、 Lasing threshold 、 Semiconductor laser theory 、 Optoelectronics 、 Materials science 、 Quantum dot laser 、 Slope efficiency 、 Homogeneous broadening
摘要: The operation of an injection-locked quantum dot laser including the output characteristics, modulation response, and linewidth enhancement factor (LEF) has been investigated in detail considering effect homogeneous inhomogeneous broadenings. Results demonstrate that a single-mode is guaranteed for broad range broadening values (operation temperatures). Injection power-dependant reduction threshold current large increase slope efficiency power have achieved. Also, near-zero uniform LEF obtained whole lasing spectra where drastic from ~60 to 0.76 observed non-injected modes. device exhibits reduced settling time modified response especially frequency overshoot enhanced 3 dB bandwidth. Obtained characteristics provide design degree freedom spectral shaping single/multi-mode which are favorable features optical signal processing applications.
harvard.edu
sci-hub.se 参考文章(33)
Z. Mi, P. Bhattacharya, S. Fathpour, High-speed 1.3μm tunnel injection quantum-dot lasers Applied Physics Letters. ,vol. 86, pp. 153109- ,(2005) , 10.1063/1.1899230
N.B. Terry, N.A. Naderi, M. Pochet, A.J. Moscho, L.F. Lester, V. Kovanis, Bandwidth enhancement of injection-locked 1.3 μm quantum-dot DFB laser Electronics Letters. ,vol. 44, pp. 904- 905 ,(2008) , 10.1049/EL:20080732
Levon V. Asryan, Robert A. Suris, Upper limit for the modulation bandwidth of a quantum dot laser Applied Physics Letters. ,vol. 96, pp. 221112- ,(2010) , 10.1063/1.3446968
M. Asada, Y. Miyamoto, Y. Suematsu, Gain and the threshold of three-dimensional quantum-box lasers IEEE Journal of Quantum Electronics. ,vol. 22, pp. 1915- 1921 ,(1986) , 10.1109/JQE.1986.1073149
J. Muszalski, J. Houlihan, G. Huyet, B. Corbett, Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm Electronics Letters. ,vol. 40, pp. 428- 430 ,(2004) , 10.1049/EL:20040270
Erwin K. Lau, Hyuk-Kee Sung, Ming C. Wu, Frequency Response Enhancement of Optical Injection-Locked Lasers IEEE Journal of Quantum Electronics. ,vol. 44, pp. 90- 99 ,(2008) , 10.1109/JQE.2007.910450
S. Fathpour, Z. Mi, P. Bhattacharya, A. R. Kovsh, S. S. Mikhrin, I. L. Krestnikov, A. V. Kozhukhov, N. N. Ledentsov, The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers Applied Physics Letters. ,vol. 85, pp. 5164- 5166 ,(2004) , 10.1063/1.1829158
Sergey Melnik, Guillaume Huyet, Alexander Uskov, The linewidth enhancement factor α of quantum dot semiconductor lasers Optics Express. ,vol. 14, pp. 2950- 2955 ,(2006) , 10.1364/OE.14.002950
Omar Qasaimeh, Linewidth enhancement factor of quantum dot lasers Optical and Quantum Electronics. ,vol. 37, pp. 495- 507 ,(2005) , 10.1007/S11082-005-4224-3
Cheng Wang, Frédéric Grillot, Vassilios Kovanis, Jacky Even, Rate equation analysis of injection-locked quantum cascade lasers Journal of Applied Physics. ,vol. 113, pp. 063104- ,(2013) , 10.1063/1.4790883