Electrical properties of TaN–Cu nanocomposite thin films
作者： Chien Ming Wang , Jang-Hsing Hsieh , Yong Qing Fu , C Li , Tu Pei Chen
DOI: 10.1016/J.CERAMINT.2003.12.051
关键词: Grain growth 、 Nucleation 、 Thin film 、 Copper 、 Annealing (metallurgy) 、 Nanocomposite 、 Mineralogy 、 Analytical chemistry 、 Temperature coefficient 、 Electrical resistivity and conductivity 、 Materials science
摘要: Abstract TaN–Cu nanocomposite thin films used as materials for TFR (thin film resistor) were prepared by reactive co-sputtering of Ta and Cu in the plasma N 2 Ar. After deposition, annealed using rapid thermal processing (RTP) at 400 °C 2, 4, 8 min, respectively to induce nucleation grain growth Cu. The results reveal that temperature coefficient resistivity (TCR) values will increase with content both as-deposited films. nitrogen result higher more negative TCR. At a constant flow rate, TCR may or decrease annealing time depending on content. In general, reach near-zero value, copper is needed compensate effect caused Ta–N. Thus, electrical properties can be characterized functions concentration time.
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