Epitaxial growth of II–VI compound semiconductors by atomic layer epitaxy
作者： C.T. Hsu
DOI: 10.1016/S0040-6090(98)00950-X
关键词: Thin film 、 Inorganic chemistry 、 Epitaxy 、 Chemical vapor deposition 、 Metalorganic vapour phase epitaxy 、 Superlattice 、 Chemistry 、 Optoelectronics 、 Atomic layer epitaxy 、 Characterization (materials science) 、 Heterojunction
摘要: Abstract The II–VI compound semiconductors are widely used for a wide variety of optoelectronic devices. This paper will discuss the growth ZnS, ZnSe, ZnSe/ZnS strained-layer superlattice and ZnSxSe1−x materials on Si substrates by atomic layer epitaxy (ALE) using metalorganic chemical vapor deposition.
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