An outline of the synthesis and properties of silicon nanowires
作者： P R Bandaru , P Pichanusakorn
DOI: 10.1088/0268-1242/25/2/024003
关键词: Nanotechnology 、 Ohmic contact 、 Photovoltaics 、 Passivation 、 Quantum dot 、 Fabrication 、 Materials science 、 Band gap 、 Thermoelectric materials 、 Nanoelectromechanical systems
摘要: … In this paper, we briefly review the distinguishing electronic and lattice properties in one such manifestation of nanostructured silicon [2], ie Si nanowires (NWs). A major focus of this …
harvard.edu
sci-hub.se 参考文章(168)
Richard S Muller, Theodore I Kamins, Chih-Tang Sah, Jasprit Singh, Robert F Pierret, GW Neudeck, Donald A Neamen, Device Electronics for Integrated Circuits ,(1977)
Mark Lundstrom, Fundamentals of carrier transport ,(1990)
Mark Lundstrom, Jing Guo, Nanoscale Transistors: Device Physics, Modeling and Simulation ,(2005)
Kenneth E. Easterling, David A. Porter, Phase transformations in metals and alloys ,(1981)
Jenny Nelson, The physics of solar cells ,(2003)
L.R. Harriott, SCALPEL: projection electron beam lithography Proceedings of the 1999 Particle Accelerator Conference (Cat. No.99CH36366). ,vol. 1, pp. 595- 599 ,(1999) , 10.1109/PAC.1999.795770
K. Schwab, E. A. Henriksen, J. M. Worlock, M. L. Roukes, Measurement of the quantum of thermal conductance Nature. ,vol. 404, pp. 974- 977 ,(2000) , 10.1038/35010065
Edwin J. Schwalbach, Peter W. Voorhees, Phase equilibrium and nucleation in VLS-grown nanowires. Nano Letters. ,vol. 8, pp. 3739- 3745 ,(2008) , 10.1021/NL801987J
M Zervos, Properties of the ubiquitous p–n junction in semiconductor nanowires Semiconductor Science and Technology. ,vol. 23, pp. 075016- ,(2008) , 10.1088/0268-1242/23/7/075016
Erwin Behnen, Quantitative examination of the thermoelectric power of n-type Si in the phonon drag regime Journal of Applied Physics. ,vol. 67, pp. 287- 292 ,(1990) , 10.1063/1.345250