Quantitative examination of the thermoelectric power of n-type Si in the phonon drag regime

摘要: A quantitative comparison between theory and experiment is presented for the thermoelectric power of n‐type Si at low temperatures, where crystal boundary scattering phonons predominant. The expression Seebeck coefficient obtained by simultaneously solving coupled Boltzmann equations electrons phonons. measured from samples two different donor concentrations (ND=8×1014 cm−3 7×1015 cm−3) temperatures ranging 25 to 200 K, thickness varied etching (370–73 μm). phonon mean free path scattering, determined experimental thermopower, agrees well with that gained thermal conductivity corrected velocities interest. An additional measurement yields phonon–phonon which about orders magnitude less than thermopower. This difference confirms influence di...