Silicon nanowires grown on metal substrates via self-catalyst mechanism

摘要: Abstract Low Pressure Chemical Vapor Deposition (LPCVD) was applied to grow Silicon Nanowires (SiNWs) without any heteroatom catalyst or special pretreatment of substrates used. Silane (SiH 4 ) as a precursor pyrolyzed at 500 °C in an oven molybdenum iron substrates. NWs were several microns long, about 100 nm thick and possessed core–jacket structure. The thin core composed crystalline silicon oriented 〈110〉 direction whereas the jacket formed by amorphous silicon. Unlike other approaches, this method avoids contamination caused metal seeds and/or applying procedures for substrate initialize/support NW growth. photocatalytical activity revealed that SiNW layers could be accredited with relatively high rate splitting water into H 2 /O .