Low-temperature, self-catalyzed growth of Si nanowires
作者： Massimo Cuscunà , Annalisa Convertino , Luigi Mariucci , Guglielmo Fortunato , Laura Felisari
DOI: 10.1088/0957-4484/21/25/255601
关键词: Cleavage (crystal) 、 Nanowire 、 Amorphous solid 、 Transmission electron microscopy 、 Catalysis 、 Crystallography 、 Chemical engineering 、 Materials science 、 Microcrystalline 、 Laser annealing 、 Reflectivity
摘要: High densities of self-catalyzed Si nanowires have been grown at temperatures down to 320 °C on different substrates, whose surfaces roughened by simple physical or chemical treatments. The particular substrates are Si(110) cleavage planes, chemically etched Si(111) and microcrystalline obtained laser annealing thin amorphous layers. NW morphology depends the growth surface. Transmission electron microscopy indicates that NWs made pure with a crystalline core structure. Reflectivity measurements confirm this latter finding.
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