作者: M. Bezuidenhout , T. Kennedy , S. Belochapkine , Y. Guo , E. Mullane
DOI: 10.1039/C5TC01389E
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摘要: We report the formation of silicon, germanium and alloyed Si1−xGex nanowires by direct pyrolysis liquid precursors on a heated substrate in an inert environment. The form high density with fast reaction time. use SEM, HRTEM, EDX-STEM, Raman spectroscopy to carry out depth study into population distribution nanowires. method was sufficiently adaptable pattern nanowire growth using standard dry film lithography techniques. Additionally, we further show that writing copper metal pen deposited sufficient catalyst allow localised constrained treated areas.