作者: Emad Mehdizadeh , Varun Kumar , Siavash Pourkamali
关键词: Piezoresistive effect 、 Resonator 、 Silicon 、 Nuclear magnetic resonance 、 Biasing 、 Lorentz force 、 Magnetometer 、 Physics 、 Microelectromechanical systems 、 Optoelectronics 、 DC bias
摘要: This letter presents sensitivity enhancement of MEMS resonant magnetometers using the thermal-piezoresistive internal amplification effect in silicon microstructures. Preliminary results show up to ~15 X improvement per bias current for a resonator operated as Lorentz force magnetometer. Magnetometer figure-of-merit, defined (mV/T) over sensor dc current, has increased from 0.29 Ω/T(mV/Tesla/mA) 4.22 Ω/T via that also led effective quality factor (Q) increasing its intrinsic value 1140 16900 (in air). Previous work on suggests factors 3-4 orders magnitude can be achieved optimally designed structures, which lead ultra-high sensitivities presented sensors. It should noted main focus this is not demonstrate highly sensitive magnetometer, but rather ability improve magnetometer Q-amplification kicks-in. Although structure been optimized operate high 262 mV/T air (minimum detectable field μT range) have achieved.