Experimental observations of the effects of oxide charge inhomogeneity on fast surface state density from high−frequency MOS capacitance−voltage characteristics
作者： M. J. McNutt , C. T. Sah
DOI: 10.1063/1.88175
关键词: Silicon 、 Capacitor 、 Oxide 、 Condensed matter physics 、 State density 、 Materials science 、 Density of states 、 Capacitance voltage 、 Analytical chemistry 、 Surface (mathematics) 、 Charge (physics)
摘要: It is demonstrated experimentally that the observed surface density of state peaks near band edges, obtained from Terman analysis capacitance−voltage characteristics silicon MOS capacitors, can be attributed to areal inhomogeneities oxide charges. An excellent quantitative match between theory and experiment after an extension C−V inhomogeneous samples include real densities.
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