C‐V and G‐V characteristics of ion‐implanted MOS structures depending upon the geometrical structure of the implanted region
作者： Yasuhito Zohta
DOI: 10.1063/1.323842
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摘要: It is found that the capacitance‐voltage (C‐V) and conductance‐voltage (G‐V) characteristics of MOS capacitors, into which ions opposite conductivity type are implanted, depend strongly upon geometrical structure ion‐implanted region. This phenomenon can be analyzed in terms lateral current flow connects an inversion layer formed region to a surrounding nonimplanted substrate. On basis this model, C‐V G‐V calculated using simple equivalent circuit, general relationships inherent model obtained. capacitors with different geometries have been prepared measure their characteristics. Comparison experimental measurements theory substantiates model.
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