Frequency response of the surface inversion layer in silicon
作者： S.R. Hofstein , K.H. Zaininger , G. Warfield
关键词: Silicon 、 Frequency response 、 Electronic engineering 、 Optoelectronics 、 Response surface methodology 、 Inversion (meteorology) 、 Capacitance 、 Materials science
摘要:
sci-hub.se 参考文章(3)
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